Virtual Wall Nitrogen Barrier Device for LPCVD TEOS – MKS

Low-pressure chemical vapor deposition (LPCVD) using TEOS (tetraethylorthosilicate, Si(OC2H5)4) is a popular precursor for the deposition of silicon dioxide as a dielectric film. The use of TEOS does create problems on the downstream side of the process chamber in the vacuum pump lines. TEOS and its byproducts have a propensity to clog the vacuum pump line with solid and viscousliquid effluent byproducts. This increases particle levels, impedes gas flow, and can cause catastrophic
pump failure.

The Virtual Wall™, when used as one element of a TEOS Effluent Management Subsystem™, has proven very effective in reducing particulates and increasing
uptime.